Fabrication of a metallic single electron tunneling transistor by multilayer technique using lithography with a scanning transmission electron microscope

One of the challenges to the fabrication of single electron tunneling (SET) devices is the reduction of the minimum feature sizes. Furthermore, the hi gher flexibility offered by a multilayer technique will make a direct writi ng method superior to the usual shadow evaporation method. The aim of this paper is to present a new variant of the direct writing method that combine s the advantages of high-resolution e-beam lithography with those of the mu ltilayer technique. The potential of this technology is demonstrated exempl arily by the fabrication of an SET transistor.