Resonant tunnelling effect in delta doped p-n GaAs junction

An additional interband tunnelling peak in delta doped p-n junction is obse rved. The peak appears at voltages that correspond to the alignment of the delta-layer energy level with an energy in the range from quasi-Fermi level to the top of the valence band of the p(+)-region. Our results show that t he voltage position of the additional peak considerably depends on the temp erature, electrical and magnetic fields with higher switching parameters in comparison to the conventional tunnelling peak. Our findings might be usef ul for the design of new microwave and fast digital devices.