Metal wire definition by high resolution imprint and lift-off

Metal wires down to 25 nm width were fabricated using a simple imprint tech nology yet showing high resolution. The patterns were transferred with high geometric control from the silicon mold into a 100 nm thick PMMA layer by pressing the mold into die resist at a temperature of 140 degrees C for 20 min. Then the PMMA layer was thinned by Argon plasma etching and 10 nm thic k Gold wires were defined by evaporation and lift-off. Similarly, by imprin t in a three layer resist structure with an intermediate metal layer used a s an etch stop 25 nm wide wires could be defined with larger process latitu de.