Hot Electron Emission Lithography: a method for efficient large area e-beam projection

We have developed an electron lithography method, Hot Electron Emission Lit hography (HEEL), which is capable of printing integrated circuits with an e xposure time of only a few seconds. The basic design of the mask, manufactu red by standard MOS technology, will be discussed. Patterns printed into e- beam resist by a 1:1 projection system show the applicability of the mask f or lithography purposes. The minimum feature size projected so far is 160 n m in a system capable of 90 nm resolution. Further improvements in resoluti on to 50 nm are possible.