SCALPEL mask-membrane charging

Citation
M. Mkrtchyan et al., SCALPEL mask-membrane charging, MICROEL ENG, 46(1-4), 1999, pp. 223-226
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
223 - 226
Database
ISI
SICI code
0167-9317(199905)46:1-4<223:SMC>2.0.ZU;2-6
Abstract
Electrostatic charge generation and accumulation in a:SiNx thin films irrad iated by energetic (100 keV) electrons is investigated and kinetic equation s describing the dynamic process are formulated. It is found that the incid ent electrons, inelastically scattered in the membrane, primarily generate plasmons. The plasmon decay creates electron-hole pairs and secondary elect rons (SE). The escape of the SEs from the target leads to a positive electr ostatic charge accumulation in the membrane. It is shown that SCALPEL(R) ma rk-membrane charging is defined by the balance of the SE escape, hole trapp ing and transport processes.