SCALPEL mask defect imaging analysis

Citation
St. Stanton et al., SCALPEL mask defect imaging analysis, MICROEL ENG, 46(1-4), 1999, pp. 227-230
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
227 - 230
Database
ISI
SICI code
0167-9317(199905)46:1-4<227:SMDIA>2.0.ZU;2-H
Abstract
Parametric image-forming models were used to demonstrate the imaging of pot ential mask defects over ranges of descriptive parameters, either isolated or coincident with a critical object. Beyond basic defect printability effe cts, CD errors due to defects near CD objects cause serious constraint on a llowable pattern defects or contaminants, and define post-repair requiremen ts. The models can provide scaling laws based on defect type, size, contras t, and proximity to a CD object, as well as rules describing tolerable defe cts using a threshold value for the local CD anomaly they cause.