Simulation and measurement of resist heating in multipass exposure using a50 kV variably shaped beam system

Citation
S. Babin et al., Simulation and measurement of resist heating in multipass exposure using a50 kV variably shaped beam system, MICROEL ENG, 46(1-4), 1999, pp. 231-234
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
231 - 234
Database
ISI
SICI code
0167-9317(199905)46:1-4<231:SAMORH>2.0.ZU;2-O
Abstract
Resist heating in electron-beam lithography was studied. An original heat f unction approach was developed and implemented with the TEMPTATION <(Temp)u nder bar>perature simul<(ation)under bar>) software tool. This software sim ulates heat transfer throughout a multilayer substrate. The heat function a lso allowed simulation of effective dose change due to combined proximity a nd heating effects. Experiments were made using a 50 kV high-throughput, va riably shaped beam system. Exposures were done with single-pass and multipa ss writing using PBS and EBR-900 resists. Lines as wide as 1 mu m broke due to resist heating. EBR-900 resist changed tone to negative because of loca l heating. A comparison of writing results at single-pass, two-pass, and fo ur-pass exposures is presented, as well as exposures at beam current densit ies up to 80 A/cm(2). Comparison of simulated and experimental data is disc ussed.