How to overcome the principal limitations of SEM columns for the use in E-beam lithography?

SEM based lithography systems create positioning errors when used for fast writing, because the electron beam cannot follow the addressing speed due t o the limitation by electromagnetic deflection. This effect is highly depen ding on the individual SEM type and leads to unwanted gaps in exposure patt erns. A new method of "Dynamic Compensation" has been developed, which allo ws to compensate such errors completely after characterizing the dynamic be haviour of the individual SEM. "ELPHY Quantum" provides characterization to ols and allows to write nearly perfect patterns with any SEM at fastest spe ed even without beam blanker.