SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator.

A surface model for SiO2 and Si etching in fluorocarbon plasmas is presente d, taking into account polymer deposition. The polymer, the CFx, and the F surface coverage is calculated, as well as the etching yields and rates. Tr ansition from deposition to etching when ion energy or F atom flux increase s is observed, and compares well with experimental data. The surface model is coupled to a complete plasma simulator, which also includes the plasma p hysics, plasma chemistry and profile evolution. The simulator is also brief ly described.