Scaling of silicon trench etch rates and profiles in plasma etching

Authors
Lukichev, VF Yunkin, VA
Citation
Vf. Lukichev et Va. Yunkin, Scaling of silicon trench etch rates and profiles in plasma etching, MICROEL ENG, 46(1-4), 1999, pp. 315-318
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
315 - 318
Database
ISI
SICI code
0167-9317(199905)46:1-4<315:SOSTER>2.0.ZU;2-J
Abstract
Plasma etching of silicon trenches in a wide range of aspect ratios is stud ied theoretically and experimentally. A generalized relationship between th e process parameters and trench geometry is derived and is verified by reac tive ion etching of silicon structures in SF6/O-2 plasma. It is shown that under certain conditions etched trenches with different widths can be geome trically similar.