Citation
F. Eberhard et al., Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system, MICROEL ENG, 46(1-4), 1999, pp. 323-326
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317
→ ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
323 - 326
Database
ISI
SICI code
0167-9317(199905)46:1-4<323:COTEBO>2.0.ZU;2-G
Abstract
The characteristics of Cl-2-Ar chemically-assisted ion-beam etching process
es for GaN and GaAs are reported. The etch rate and anisotropy have been in
vestigated varying ion energy, tilt angle, substrate temperature, and Cl-2
flow. Vertical and smooth sidewalls, which fulfill the requirements on lase
r facets, have been demonstrated in GaAs and GaN.