Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching

Authors
Manin-Ferlazzo, L Carcenac, F Teissier, R Faini, G Mailly, D
Citation
L. Manin-ferlazzo et al., Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching, MICROEL ENG, 46(1-4), 1999, pp. 331-334
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
331 - 334
Database
ISI
SICI code
0167-9317(199905)46:1-4<331:DCOAIP>2.0.ZU;2-K
Abstract
Highly anisotropic sub-100nm InP patterns presenting low roughness have bee n obtained using SiCl4 reactive ion etching. Aspect ratios above 20 are rep orted with low sidewall damage characterized by transmission electron micro scopy and conductance measurements. The influence of the material used as a n etch mask on the anisotropy and the roughness of the etched structures is investigated.