L. Manin-ferlazzo et al., Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching, MICROEL ENG, 46(1-4), 1999, pp. 331-334
Highly anisotropic sub-100nm InP patterns presenting low roughness have bee
n obtained using SiCl4 reactive ion etching. Aspect ratios above 20 are rep
orted with low sidewall damage characterized by transmission electron micro
scopy and conductance measurements. The influence of the material used as a
n etch mask on the anisotropy and the roughness of the etched structures is
investigated.