Resist surface investigations for reduction of line-edge-roughness in top surface imaging technology

Citation
T. Sugihara et al., Resist surface investigations for reduction of line-edge-roughness in top surface imaging technology, MICROEL ENG, 46(1-4), 1999, pp. 339-343
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
339 - 343
Database
ISI
SICI code
0167-9317(199905)46:1-4<339:RSIFRO>2.0.ZU;2-9
Abstract
The Line-Edge-Roughness (LER) of resist pattern on fine feature has been ch aracterised by means of top/down line width measurements by SEM in Top Surf ace Imaging (TSI) technology. The resist surface investigation using AFM ha s provided a correlation between resist Surface Roughness (SR) and the form ation mechanism of LER. LER has been improved to 7 nm at 0.18 mu m dense pa tterns by the optimisation of dry development conditions based on these res ist surface investigation.