Comparison of laser produced and gas discharge based EUV sources for different applications

Citation
R. Lebert et al., Comparison of laser produced and gas discharge based EUV sources for different applications, MICROEL ENG, 46(1-4), 1999, pp. 465-468
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
465 - 468
Database
ISI
SICI code
0167-9317(199905)46:1-4<465:COLPAG>2.0.ZU;2-1
Abstract
Pulsed plasmas, e.g., laser produced plasma (LPP) and gas discharge based p inch plasmas are known as intense sources of soft x-ray and extreme ultravi olet (EUV) radiation in the wavelength interval of about 1 nm to beyond 50 nm. They can be generated in compact, laboratory scale devices. Both scheme s exhibit similar source characteristics concerning, e.g., wavelength regio n, bandwidth, source size, emitted radiation per pulse or average emitted p ower when operated at similar parameters. By exploiting their technological degrees of freedom their source characteristics can be matched to the spec ial demands of a given application like EUV-lithography or metrology, x-ray microscopy, XPS or other x-ray analytics. In this work laser produced and gas discharge based plasmas are compared wi th respect to their source characteristics. The comparison concerns to a la ser produced plasma using a commercial 1 J Nd:YAG laser with different targ et concepts (liquid, cryogenic or solid target) and a gas discharge based E UV sources with electrical pulse energies of about 1 J. The same absolute c alibrated diagnostics used for both plasmas allows for a direct comparison.