Maskless ion beam lithography system

Authors
Lee, Y Gough, RA King, TJ Ji, Q Leung, KN McGill, RA Ngo, VV Williams, MD Zahir, N
Citation
Y. Lee et al., Maskless ion beam lithography system, MICROEL ENG, 46(1-4), 1999, pp. 469-472
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
469 - 472
Database
ISI
SICI code
0167-9317(199905)46:1-4<469:MIBLS>2.0.ZU;2-9
Abstract
A new type of focused ion beam column is being designed to achieve a beam s pot size of less than 100nm. This column is compact and can be operated wit h multiple beams to enhance the throughput for lithography applications. Th e column has been coupled with a multicusp ion source for beam transmission and high voltage holdup testing. The 2.5-cm long column can be used to acc elerate different kinds of ion beams up to 45 keV.