Resolution improvement of ion projector with a low energy spread multicuspion source

Authors
Bruenger, WH Torkler, M Leung, KN Lee, Y Williams, MD Loeschner, H Stengl, G Fallmann, W Paschke, F Stangl, G Rangelow, IW Hudek, P
Citation
Wh. Bruenger et al., Resolution improvement of ion projector with a low energy spread multicuspion source, MICROEL ENG, 46(1-4), 1999, pp. 477-480
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
477 - 480
Database
ISI
SICI code
0167-9317(199905)46:1-4<477:RIOIPW>2.0.ZU;2-S
Abstract
new multicusp ion source developed by the Lawrence Berkeley Laboratory has been implemented into the ion projector of the Fraunhofer institute ISiT in Berlin. This source with low energy spread of approximate to 2eV reduces c hromatic aberration so that 50nm lines can be printed. with an exposure dos e of 0.3 mu C/cm(2) of 75keV He+ ions into standard 300nm thick DUV resist (Shipley UV II HS).