Finite element simulation of ion-beam lithography mask fabrication

Citation
R. Tejeda et al., Finite element simulation of ion-beam lithography mask fabrication, MICROEL ENG, 46(1-4), 1999, pp. 485-488
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
485 - 488
Database
ISI
SICI code
0167-9317(199905)46:1-4<485:FESOIL>2.0.ZU;2-W
Abstract
Fabrication of low distortion stencil masks is one of the key issues for io n-beam projection lithography (IPL). Identifying the sources of distortion and optimizing the processing techniques are essential to meet the stringen t error budgets. Since experiments are time consuming and expensive, it is desirable to develop accurate simulation procedures which can be used for a nalysis and design. This paper presents results to show that finite element analysis is a viable alternative.