A high energy ion projector under construction will allow mask controlled i
on beam implantation at demagnification between 10x and 100x. For energetic
ions the material of the mask must be chosen in view of the required value
s of the stopping power and heat conduction. Thermal expansion and sputter
effects are to be minimised. In a first experiment a 16x reduced projection
of a copper mask with 20 mu m wide structures was realized. To improve the
resolution to 250 nm on the target mask structures of 4 mu m are required.