Defect creation by low-energy ion bombardment on GaAs (001) and Ge (001) surfaces

Authors
Kuronen, A Tarus, J Nordlund, K
Citation
A. Kuronen et al., Defect creation by low-energy ion bombardment on GaAs (001) and Ge (001) surfaces, NUCL INST B, 153(1-4), 1999, pp. 209-212
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
153
Issue
1-4
Year of publication
1999
Pages
209 - 212
Database
ISI
SICI code
0168-583X(199906)153:1-4<209:DCBLIB>2.0.ZU;2-J
Abstract
We have studied the ion beam - surface interactions with the classical mole cular dynamics simulation method. The properties of the GaAs (001) surface predicted by the potential model were investigated. The structure and amoun t of defects created on the GaAs (001) and Ge (001) surfaces under 50 eV Ga and Ge ions, respectively, were investigated and compared. The defect crea tion for the GaAs system was found to differ considerably from that of the Ge system. Since Ga, As, and Ge have similar masses this illustrates the im portance of chemical effects on damage production in low-energy ion irradia tion. (C) 1999 Elsevier Science B.V. All rights reserved.