Mott transition as seen from the insulating side

Authors
Citation
El. Nagaev, Mott transition as seen from the insulating side, PHYS LETT A, 257(1-2), 1999, pp. 88-92
Citations number
5
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
03759601 → ACNP
Volume
257
Issue
1-2
Year of publication
1999
Pages
88 - 92
Database
ISI
SICI code
0375-9601(19990621)257:1-2<88:MTASFT>2.0.ZU;2-D
Abstract
The Mott transition was considered in nonmagnetic and ferromagnetic semicon ductors using an approach from the insulating side. The Mott critical densi ties were determined for some systems, including those which cannot bet con sidered using the standard Mott procedure, e.g., two-electron donors in fer romagnetic semiconductors whose ground state is of the 1s/2s type (EuO with excess Eu, etc.). The transition to the highly conductive state should be continuous or almost continuous. (C) 1999 Published by Elsevier Science B.V . All rights reserved.