Vapor phase epitaxial liftoff of GaAs and silicon single crystal films

Authors
Chang, W Kao, CP Pike, GA Slone, JA Yablonovitch, E
Citation
W. Chang et al., Vapor phase epitaxial liftoff of GaAs and silicon single crystal films, SOL EN MAT, 58(2), 1999, pp. 141-146
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
58
Issue
2
Year of publication
1999
Pages
141 - 146
Database
ISI
SICI code
0927-0248(199906)58:2<141:VPELOG>2.0.ZU;2-O
Abstract
Among the technologies for integrating GaAs devices with Si VLSI chips, epi taxial liftoff (ELO) is conspicuous for maintaining the quality of the sing le crystal epitaxial GaAs films. Traditionally, ELO is implemented in aqueo us HF solution. It would be cleaner and simpler if ELO could be implemented in a vapor process. In this article, we will present the potential improve ments in the ELO process by using a vapor phase etch to undercut thin films . (C) 1999 Elsevier Science B.V. All rights reserved.