In this paper we describe the fabrication and characteristics of highly eff
icient and stable CdTe/CdS thin film solar cells. Our cells are prepared in
three subsequent phases. Firstly, we deposit via sputtering, without solut
ion of continuity a layer of CdS on top of the front contact made up of a d
ouble layer of ITO/SnO2 deposited on a soda lime glass substrate. The secon
d phase consists in the treatment of the CdS layer, which is the key factor
for the fabrication of a good heterojunction, with CdCl2 and in the subseq
uent deposition of the CdTe layer via close space sublimation technique. Fi
nally, the back contact is fabricated via sputtering making use of the Sb,T
e, compound which guarantees the cell stability. Under global AM1.5 conditi
ons the open-circuit voltage, short-circuit current and fill factor of our
best cell, fabricated without antireflecting coating and normalized to the
area of 1 cm(2), were V-oc = 858 mV, J(sc) = 23 mA/cm(2) and ff = 74%, resp
ectively, corresponding to a total area conversion efficiency of eta = 14.6
%. (C) 1999 Elsevier Science B.V. All rights reserved.