An accurate HJFET current-voltage model including temperature dependence for a circuit simulator

We present a new hetero-junction FET (HJFET) current-voltage (I-V) model in tended for implementation with a large signal simulator. The developed mode l takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our pr evious reported model [Hida I-I, Itoh T, Ohta K. An accurate de model of 2- DEG FET for implementation on a circuit simulator. IEEE Electron Device Let t 1986:7:393-395.]. which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, g(m), drain conductance, go, an d threshold voltage, V-T, vary as linear functions of temperature. To descr ibe the dependence, we introduced linear functions of temperature into the g(m), g(D) and V-T descriptions. We also added the temperature dependence d escription to the diode current model and the diffusion current model. Alth ough our model describes the temperature dependence using quite simple form ulas, the simulated results agree well with the measurements. (C) 1999 Else vier Science Ltd. All rights reserved.