Characterization of transparent and conductive electrodes of indium tin oxide thin films by sequential reactive evaporation

ITO thin films have been deposited onto glass substrates by sequential reac tive evaporation as transparent and conductive electrodes for devices. The method has the advantage of low enough temperatures (less than or equal to 200 degrees C) for the processes of preparation and post-annealing, accurat e control of single layer thickness, simplicity and low cost. ITO films wit h electrical resistivity of 10(-2) Omega cm and optical transparency greate r than 90% have been obtained. The structural, compositional, electrical, o ptical properties of the films depend on the annealing time. The stability of the electrical and optical properties of the electrodes has been investi gated showing the feasibility of producing high quality ITO films by this m ethod. (C) 1999 Elsevier Science S.A. All rights reserved.