Optical characterization of CdSxSe1-x films grown on quartz substrate by pulsed laser ablation technique

CdSxSe1-x alloys have been deposited on quartz substrates by means of pulse d laser ablation, a relatively new technique for growing semiconductor film s. We obtained high quality polycrystalline films which present photolumine scence efficiency up to at room temperature. The dependence of the band gap on the x composition, measured by absorption spectra at 10 K, shows an upw ards band gap bowing. The real part of the refractive index in the transpar ent region at room temperature is well described by the Sellmeier relation. (C) 1999 Published by Elsevier Science S.A. All rights reserved.