Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering

Copper nitride (Cu3N) thin films were deposited on glass substrates by reac tive radio-frequency (rf) magnetron sputtering from a metal copper target i n a nitrogen/argon atmosphere. The deposition rate of the films gradually d ecreased and excessive nitrogen was added to the films as nitrogen partial pressure increased. The color of the deposited films was a reddish dark bro wn. The Cu3N films obtained by this deposition method were strongly texture d with crystal direction[100]. The grain size of the polycrystalline films ranged from 15 to 30 nm. The resistivity and the optical energy gap of the films were found to be change with the nitrogen content. (C) 1999 Elsevier Science S.A. All rights reserved.