ZnO thin films were deposited by r.f. magnetron sputtering from zinc oxide
target. The composition (O/Zn atomic ratio) determined by Rutherford backsc
attering spectrometry depends narrowly on the sputtering parameters. The O/
Zn atomic ratio is found to increase with the oxygen partial and the total
pressures; however substoichiometric films were obtained at low pressures a
nd high sputtering powers in the nonreactive deposition process. X-ray diff
raction measurements show that all the films are crystallized in the wurtzi
te form and present a preferred orientation along the [002] direction. The
crystallinity is found to increase with the kinetic energy of the sputtered
particles. The films contain compressive stresses originating mainly from
the contribution of the intrinsic component. A post deposition heat treatme
nt is essential to produce relaxation of the stresses. Scanning electron mi
crographs show that the ZnO deposits have a columnar structure. the compact
ness of the films is dependent on the sputtering conditions. The EXAFS meas
urements show that Zn atoms have a tetrahedral environment with a zinc-oxyg
en distance of 1.95 Angstrom. infrared investigations confirm these finding
s and show that zinc atoms stay tetra hedrally coordinated even though the
O/Zn atomic ratio changes from 0.95 to 1.06. The optical constants (refract
ive index and absorption coefficient) vary also in a wide range. Their vari
ations were related to the composition and structure evolution. (C) 1999 El
sevier Science S.A. All rights reserved.