Process-kinetics in facing targets sputtering of multi-component oxide thin films

Citation
Ss. Nathan et al., Process-kinetics in facing targets sputtering of multi-component oxide thin films, THIN SOL FI, 347(1-2), 1999, pp. 14-24
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
347
Issue
1-2
Year of publication
1999
Pages
14 - 24
Database
ISI
SICI code
0040-6090(19990622)347:1-2<14:PIFTSO>2.0.ZU;2-#
Abstract
The kinetics of the processes in facing targets sputtering of multicomponen t oxide films is presented. The novel configuration of the process exhibits an enhanced ionization efficiency. Discharge diagnostics performed using o ptical emission spectroscopy revealed strong dependence of plasma parameter s on process conditions. Numerical simulation based on thermalization and d iffusion of sputtered atoms has been performed to estimate the transport ef ficiency in off-axis mode. Composition, structure and epitaxial quality of YBa2Cu3O7-x films prepared was found to be strongly dependent on atomic flu x ratios (of Cu/Y and Ba/Y) arriving at the substrate, resputtering effect and phase stability of YBa2Cu3O7-x These studies have been shown to be usef ul in understanding the complex processes that occur in sputtering of multi component films. (C) 1999 Elsevier Science S.A. All rights reserved.