Effects of Cu seeding layer on Si grown by partially ionized beam in plasma enhanced chemical vapor deposition

Plasma enhanced chemical vapor deposition of the Cu films on Si substrate w as investigated in which 30 Angstrom Cu-seed layer on the substrate was for med by partially ionized beam prior to deposition. In order to elucidate th e difference in growth mechanism of Cu film between on Cu-seed layer and on bare Si, the initial stage of Cu-seed layer grown by partially ionized bea m was studied by transmission electron microscopy and different nucleation formation processes from conventional method was shown. A high deposition r ate and an improved adhesion strength were achieved when thick Cu film on t he Cu seeded Si substrate was deposited by plasma enhanced chemical vapor d eposition. (C) 1999 Elsevier Science S.A. All rights reserved.