Sr. Darvish et al., Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films, THIN SOL FI, 346(1-2), 1999, pp. 108-115
Crystalline structure-induced effects on the ferroelectric and dielectric p
roperties in electron-beam deposited PZT thin films are described, TiO2 dis
persion in PZT reduces dielectric constant and charge storage density to 40
0 and 5.4 mu C/cm(2) and increases dissipation factor. Pyrochlore PZT inclu
sions cause further reduction to 60 and 77 nC/cm(2) but have no effect on m
icroscopic polarization, Wide variation in relaxation times below 220 degre
es C and Debye-like relaxation process above 220 degrees C is the character
istics behavior of TiO2 mixed PZT films. A relaxation time constant of appr
oximate to 10(-11) s with activation energy of 0.38 eV is observed in TiO2
mixed PZT. Inclusion of pyrochlore phase causes high time constant of relax
ation process approximate to 4.2 mu s and large dissipation factor. (C) 199
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