Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films

Citation
Sr. Darvish et al., Influence of non-perovskite phases on ferroelectric and dielectric behavior of electron-beam deposited PZT thin films, THIN SOL FI, 346(1-2), 1999, pp. 108-115
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
346
Issue
1-2
Year of publication
1999
Pages
108 - 115
Database
ISI
SICI code
0040-6090(19990601)346:1-2<108:IONPOF>2.0.ZU;2-V
Abstract
Crystalline structure-induced effects on the ferroelectric and dielectric p roperties in electron-beam deposited PZT thin films are described, TiO2 dis persion in PZT reduces dielectric constant and charge storage density to 40 0 and 5.4 mu C/cm(2) and increases dissipation factor. Pyrochlore PZT inclu sions cause further reduction to 60 and 77 nC/cm(2) but have no effect on m icroscopic polarization, Wide variation in relaxation times below 220 degre es C and Debye-like relaxation process above 220 degrees C is the character istics behavior of TiO2 mixed PZT films. A relaxation time constant of appr oximate to 10(-11) s with activation energy of 0.38 eV is observed in TiO2 mixed PZT. Inclusion of pyrochlore phase causes high time constant of relax ation process approximate to 4.2 mu s and large dissipation factor. (C) 199 9 Elsevier Science S.A. All rights reserved.