The effect of rapid thermal annealing on properties of plasma enhanced CVDsilicon oxide films

The effect of rapid thermal annealing in oxygen and nitrogen ambients on th e properties of silicon oxide films of different stoichiometry was studied. The films were deposited on silicon wafers by plasma enhanced chemical vap our deposition (PECVD) from silane (SiH4) and nitrous oxide (N2O) at differ ent N2O/SiH4 flow ratios. It was found that rapid thermal annealing signifi cantly affects the thickness of deposited oxides and the total mechanical s tress in the film. The density and the refractive index of the film hardly changed. The hydrogen content of the films has been discussed on the basis of Fourier transform infrared transmission spectroscopy, and is related to the changes in the him properties. (C) 1999 Elsevier Science S.A. All right s reserved.