Technology of integrable free-standing yttria-stabilized zirconia membranes

Authors
Bruschi, P Diligenti, A Nannini, A Piotto, M
Citation
P. Bruschi et al., Technology of integrable free-standing yttria-stabilized zirconia membranes, THIN SOL FI, 346(1-2), 1999, pp. 251-254
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
346
Issue
1-2
Year of publication
1999
Pages
251 - 254
Database
ISI
SICI code
0040-6090(19990601)346:1-2<251:TOIFYZ>2.0.ZU;2-D
Abstract
Free-standing yttria-stabilized zirconium oxide membranes were fabricated b y means of two different processes which are compatible with the standard c omplementary metal oxide semiconductor technology. The membrane is a thin f ilm suspended on a pyramid-shape hole obtained on a silicon substrate by me ans of an anisotropic etching. A square membrane with a maximum side dimens ion of 170 mu m was obtained. (C) 1999 Elsevier Science S.A. All rights res erved.