SiC film deposition by DC magnetron sputtering

SiC film was prepared using sintered SiC target by means of DC magnetron sp uttering. With improving vacuum end insulation between the target and the t arget cover, amorphous SIC aim was obtained with a substrate temperature of 200 degrees C or so. The results that deposition conditions such as gas pr essure, sputtering poor er, substrate-target distance influence deposition rate were given. Finally, the hardness and the resistance-temperature depen dence were also investigated. The maximum absolute hardness of measured sam ples was H, 2410 Kg/mm(2). The resistance of SiC film prepared was sensitiv e to temperature within a measuring temperature range of 40-415 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.