Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Authors
Eisele, H Flebbe, O Kalka, T Preinesberger, C Heinrichsdorff, F Krost, A Bimberg, D Dahne-Prietsch, M
Citation
H. Eisele et al., Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, APPL PHYS L, 75(1), 1999, pp. 106-108
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
1
Year of publication
1999
Pages
106 - 108
Database
ISI
SICI code
0003-6951(19990705)75:1<106:CSMOSI>2.0.ZU;2-E
Abstract
We present cross-sectional scanning-tunneling microscopy results of threefo ld stacked InAs quantum dots prepared by metal-organic chemical-vapor depos ition at 485 degrees C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images in dicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face. (C) 1999 American Institute of Physics. [S0003-69 51(99)04227-8].