Electric fatigue properties of sol-gel-derived Pb(Zr, Ti)O-3/PbZrO3 multilayered thin films

Authors
Jang, JH Yoon, KH
Citation
Jh. Jang et Kh. Yoon, Electric fatigue properties of sol-gel-derived Pb(Zr, Ti)O-3/PbZrO3 multilayered thin films, APPL PHYS L, 75(1), 1999, pp. 130-132
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
1
Year of publication
1999
Pages
130 - 132
Database
ISI
SICI code
0003-6951(19990705)75:1<130:EFPOSP>2.0.ZU;2-O
Abstract
The effect of various stacking sequences of sol-gel-prepared Pb(Zr, Ti)O-3/ PbZrO3 (PZT/PZ) multilayered thin films on the electric fatigue properties was investigated. The antiferroelectric layer between the Pt electrode and the ferroelectric layers acted as a barrier to fatigue. The initial P(*)r-P (boolean AND)r (about 5 mu C/cm(2)) of the PZ(1 layer)/PZT(5 layers)/PZ(1 l ayer) film remained nearly unchanged after 10(9) cycles of a +/-10 V square -wave pulse. The leakage current of the multilayered films did not show any change during 10(9) cycles. (C) 1999 American Institute of Physics. [S0003 -6951(99)00827-X].