Kh. Park et al., Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface, APPL PHYS L, 75(1), 1999, pp. 139-141
Nanostructures composed of Ag clusters on an Sb-terminated Si surface were
designed in a highly controlled manner and the electric conduction through
Ag nanoclusters to the silicon substrate was investigated by using a scanni
ng tunneling microscopy/spectroscopy. It was found that the lateral conduct
ion between neighboring Ag clusters significantly contributed to the tunnel
ing current-voltage characteristics, and the metallic single-electron tunne
ling structures employing the lateral conduction channels at room temperatu
re can be fabricated via a field-induced manipulation of Ag clusters. (C) 1
999 American Institute of Physics. [S0003-6951(99)04627-6].