Spray CVD of copper indium disulfide films: Control of microstructure and crystallographic orientation

Citation
Ja. Hollingsworth et al., Spray CVD of copper indium disulfide films: Control of microstructure and crystallographic orientation, CHEM VAPOR, 5(3), 1999, pp. 105
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
5
Issue
3
Year of publication
1999
Database
ISI
SICI code
0948-1907(199906)5:3<105:SCOCID>2.0.ZU;2-#
Abstract
Communication: CnInS(2) is a good candidate material for high efficiency ab sorber layers in thin film solar cells. In this work, spray CVD is used for the first lime to deposit this promising material. Using a single-source p recursor, stoichiometric films with little carbon or phosphorus contaminati on are obtained, and although film microstructure and orientations are quit e sensitive to deposition parameters, such as substrate and flow rates, den se columnar growth and faceted crystalline features are produced.