ELECTRON-MUON DYNAMICS IN N-TYPE SILICON

We report RF-mu SR results in lightly n-doped Si samples. Measurement of the diamagnetic amplitude in both the [100] and [111] directions fo r a sample with N-D less than or equal to 5 x 10(12) cm(-3) clarifies the charge/spin electron-exchange dynamics for bond-centered muonium a nd yields a 3300 Angstrom(2) electron-capture cross section at Mu(BC)( +). An increase in the Mu(BC)(0) RF amplitude observed at 30 K in a sa mple of N-D similar or equal to 2 x 10(13) cm(-3) provides direct evid ence for enhanced low-temperature creation of Mu(BC)(0) at the expense of Mu(T)(0) with increased electron concentration.