TIMESCALE FOR A CHANGE OF MUONIUM STATE IN SILICON

Authors
STORCHAK VG COTTRELL SP COX SFJ
Citation
Vg. Storchak et al., TIMESCALE FOR A CHANGE OF MUONIUM STATE IN SILICON, Hyperfine interactions, 105(1-4), 1997, pp. 363-368
Citations number
17
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
105
Issue
1-4
Year of publication
1997
Pages
363 - 368
Database
ISI
SICI code
0304-3843(1997)105:1-4<363:TFACOM>2.0.ZU;2-S
Abstract
Muon spin dynamics in silicon have been studied in transverse magnetic fields in the temperature range from 5 K to 315 K. The temperature de pendence of the initial phase of the diamagnetic component precession signal undergoes a step-like increase as temperature is raised above a bout 150 K. This feature is used to estimate the bond-centered muonium lifetime to be about 10(-10) s.