Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

We have developed a simple process to form epitaxial CoSi2 for shallow junc tion. Prior to metal deposition, the patterned wafers were treated with HF- vapor passivation. As observed hy scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughne ss. The epitaxial behavior was confirmed by cross-sectional transmission el ectron microscopy (TEM). Decreased sheet resistance and leakage current, an d improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.