Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

This study presents the room-temperature operation of delta-doped Si resona nt interband tunneling diodes which were fabricated by low-temperature mole cular beam epitaxy, Post growth rapid thermal annealing of the samples was found to improve the current-voltage (I-V) characteristics. Optimal perform ance was observed for a 600 degrees C 1 min anneal, yielding a peak-to-vall ey current ratio (PVCR) as high as 1.38 with a peak current density (J(p)) as high as 1.42 kA/cm(2) for a device with a 4-nm intrinsic Si tunnel barri er. When the tunnel barrier was reduced to 2 nm, a PVCR of 1.41 with a J(p) as high as 10.8 kA/cm(2) was observed. The devices withstood a series of b urn-in measurements without noticeable degradation in either the J(p) or PV CR, The structures presented are strain-free, and are compatible with a sta ndard CMOS or HBT process.