Enhanced mobility PMOSFET's using tensile-strained Si1-yCy layers

We demonstrate for the first time that carbon incorporation in Si epitaxial layers may be an alternative method to deposit enhanced mobility tensile-s trained Si MOSFET channel lavers directly on a silicon substrate, thereby e liminating the need to deposit a thick relaxed SiGe buffer layer, from whic h dislocations and other defects can propagate to the channel region. The f abrication and electrical properties of PMOSFET's with Si1-yCy alloy channe l layers are reported in this paper for the first time, It is found that sm all amounts of C in Si films can produce high quality epitaxial material, P MOSFET's fabricated on these layers demonstrate enhanced hole mobility over that of control Si.