Novel offset gated poly-Si TFT's with subgate

We have fabricated a new offset gated poly-Si TFT by employing photoresist reflow, have measured various experimental data of the new device, such as hydrogenation results and high-frequency characteristics, and have analyzed device characteristics as a function of driving frequency, Our devices hav e a unique gate pattern and the hydrogenation effect is somewhat different from the previous results [6], Our experimental results suggest that with t he same offset length, the device with a wider space between the maingate a nd the subgate is more advantageous for hydrogenation. Experimental results show that the leakage current of the new device is two orders of magnitude lon er than that of the nonoffset gated device, while the ON current of th e new device is almost identical to the nonoffset gated device in the typic ally used frequency range (10-100 kHz).