Physically-based threshold voltage determination for MOSFET's of all gate lengths

A reliable method to determine the threshold voltage V-th for MOSFET's with gate length down to the sub-0.1 mu m region is proposed. The method determ ines V-th by linear extrapolation of the transconductance g(m) to zero and is therefore named "GMLE method." To understand the physical meaning of the method and to prove its reliability for different technologies 2-D simulat ion was applied. The results reveal that determined V-th values always meet the threshold condition, i.e., the onset of inversion layer buildup.