On the impact of the capture rates on the generation recombination lifetime ratio of a single deep level

Authors
Simoen, E Claeys, C
Citation
E. Simoen et C. Claeys, On the impact of the capture rates on the generation recombination lifetime ratio of a single deep level, IEEE DEVICE, 46(7), 1999, pp. 1487-1488
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
1487 - 1488
Database
ISI
SICI code
0018-9383(199907)46:7<1487:OTIOTC>2.0.ZU;2-M
Abstract
The impact of the capture rate ratio on the determination of the generation /recombination (GR) level position from the ratio of the generation and rec ombination lifetime of a single deep centre is investigated. This is achiev ed by a further elaboration on the work by Schroder [4]. It is shown that f or realistic lifetime ratios (greater than or equal to 50), the derived tra p energy E-T should be close to the real value, irrespective of the capture rates.