A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

Citation
Hk. Lee et al., A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures, IEEE DEVICE, 46(7), 1999, pp. 1489-1491
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
1489 - 1491
Database
ISI
SICI code
0018-9383(199907)46:7<1489:AHFIBU>2.0.ZU;2-I
Abstract
A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined si licon oxinitride membrane (50 mu m x 50 mu m). This bolometer is realized i n multilevel electrothermal structures with a fill-factor over 92%. From th e multilevel structure, thermal isolation can be independently optimized wi thout sacrificing LR absorbing area. Initial measurements show a thermal ti me constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 x 10(8) cm root Hz/W.