Tunneling bursts for negligible SILC degradation

Authors
Ricco, B Pieracci, A
Citation
B. Ricco et A. Pieracci, Tunneling bursts for negligible SILC degradation, IEEE DEVICE, 46(7), 1999, pp. 1497-1500
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
1497 - 1500
Database
ISI
SICI code
0018-9383(199907)46:7<1497:TBFNSD>2.0.ZU;2-Z
Abstract
This paper suggests the use of high-voltage tunneling bursts for (virtually ) SILC-free current injection in ultra-thin MOS structures and indicates th e possibility of fast programming of tunnel-based non-volatile memories.