A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters

Authors
Jouan, S Planche, R Baudry, H Ribot, P Chroboczek, JA Dutartre, D Gloria, D Laurens, M Llinares, P Marty, M Monroy, A Morin, C Pantel, R Perrotin, A de Pontcharra, J Regolini, JL Vincent, G Chantre, A
Citation
S. Jouan et al., A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters, IEEE DEVICE, 46(7), 1999, pp. 1525-1531
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
1525 - 1531
Database
ISI
SICI code
0018-9383(199907)46:7<1525:AHL1NS>2.0.ZU;2-4
Abstract
A 200-mm 0.35-mu m silicon-germanium heterojunction bipolar transistor (SiG e HBT) technology involving epitaxially-aligned polysilicon emitters is des cribed. The devices are shown to combine the high speed performances typica l for poly-Si emitter SiGe base devices (f(max) up to 70 GHz) and the low 1 /f noise properties of monocrystalline emitter structures (noise figure-of- merit KB as low as 7.2 x 10(-10) mu m(2)). Statistical current gain data ar e used to demonstrate the manufacturability of this innovative SiGe HBT tec hnology.