Self-aligned CoSi2 for 0.18 mu m and below

Authors
Maex, K Lauwers, A Besser, P Kondoh, E de Potter, M Steegen, A
Citation
K. Maex et al., Self-aligned CoSi2 for 0.18 mu m and below, IEEE DEVICE, 46(7), 1999, pp. 1545-1550
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
7
Year of publication
1999
Pages
1545 - 1550
Database
ISI
SICI code
0018-9383(199907)46:7<1545:SCF0MM>2.0.ZU;2-N
Abstract
CoSi2 is being used commonly for the advanced IC technologies, There are se veral process choices to be made for the formation of a high yielding and r eproducible silicide, In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 mu m and below.