Effects of annealing on the electrical properties of Fe-doped InP

Authors
Zhao, YW Fung, S Beling, CD Sun, NF Sun, TN Chen, XD Yang, GY
Citation
Yw. Zhao et al., Effects of annealing on the electrical properties of Fe-doped InP, J APPL PHYS, 86(2), 1999, pp. 981-984
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
2
Year of publication
1999
Pages
981 - 984
Database
ISI
SICI code
0021-8979(19990715)86:2<981:EOAOTE>2.0.ZU;2-Z
Abstract
Fe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 degrees C for different durations. The electrical property of annea led InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient photocurrent spectroscopy. Upon annealing, the change of electrical propert y in this material is indicative of the formation of a high concentration o f defects. The formation process of these thermally induced defects is disc ussed. (C) 1999 American Institute of Physics. [S0021-8979(99)02914-X].